PART |
Description |
Maker |
AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix) High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
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ETC[ETC] ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. Alliance Semiconductor ...
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CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
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Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
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HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
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HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 4-word Burst
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Renesas Technology / Hitachi Semiconductor
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AS5C4009LLDG-100/XT AS5C4009LLDG-100/IT AS5C4009LL |
512K*8 SRAM ultra Low power SRAM AVAILABLE AS MILITARY SPECIFICATION x8 SRAM x8的SRAM
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Austin Semiconductor, Inc
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AS7C33128PFD32_36B AS7C33128PFD36B-200TQIN AS7C331 |
Sync SRAM - 3.3V LM397 Single General Purpose Voltage Comparator; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 4 ns, PQFP100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 4 ns, PQFP100 128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100 128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3 ns, PQFP100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3.5 ns, PQFP100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 3.3 128K的X 32/36管道爆裂同步SRAM
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Alliance Semiconductor Corp... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. Integrated Silicon Solution, Inc.
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CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165 2M X 8 DDR SRAM, 0.45 ns, PBGA165
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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AS7C251MNTD18A AS7C251MNTD18A-166TQIN AS7C251MNTD1 |
2.5V 1M x 18 Pipelined SRAM with NTD 1M X 18 ZBT SRAM, 3.8 ns, PQFP100 Current Mode PWMs; Package: DIP; NTD? Sync SRAM - 2.5V
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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